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THERLICON TAO‑1132 Nitrogen Oven

THERLICON TAO‑1132 inline nitrogen oven, max temperature 220℃, oxygen content ≤50ppm, clean‑grade environment for semiconductor substrate baking, moisture removal and adhesive curing.

THERLICON TAO‑1132 inline clean nitrogen oven is continuous inline thermal processing equipment, designed for semiconductor substrate de‑moisture baking, PCBA adhesive curing, component annealing and sensitive material anti‑oxidation heat treatment. Whole chamber adopts full SUS304 stainless‑steel construction with internal HEPA filtration to achieve clean‑grade working environment. It precisely controls nitrogen purging flow to keep internal oxygen concentration ≤50 ppm. Working temperature ranges from room temperature up to 220℃, temperature uniformity ±1.8℃. Equipped with total 7 independent heating zones, single effective chamber dimension L2575D710H832 mm, supports 25 layers fixtures, single fixture thickness maximum 6 mm. Total machine power is 85 kW, power supply AC 380V three‑phase five‑wire. It supports barcode scanning to bind product batch data for traceability. Widely used for power semiconductor substrates, automotive PCBA, optical component baking and curing processes.

Core Features

‑ Full SUS304 internal chamber, HEPA filter for clean‑grade production environment ‑ Nitrogen atmosphere protection, chamber oxygen content controlled ≤50 ppm ‑ Max working temperature 220℃, temperature uniformity ±1.8℃ ‑ 7 independent heating zones for multi‑segment temperature profile programming ‑ Chamber dimension L2575 × D710 × H832 mm; supports 25‑layer fixture loading, fixture thickness ≤6 mm ‑ Barcode scanning function for product batch traceability ‑ Industrial PC + PLC control, recipe storage, production data log & export ‑ Real‑time monitoring for oxygen concentration, temperature and nitrogen flow ‑ Over‑temperature, abnormal gas flow safety interlock protection ‑ Inline continuous running, seamless docking with upstream and downstream automation equipment

Specs (Summary)

Item Parameter
Model TAO‑1132
Working Temperature RT ~ 220℃
Temperature Uniformity ±1.8℃
Internal Chamber Size L2575 × D710 × H832 mm
Heating Zones 7 independent zones
Fixture Capacity 25 layers, fixture thickness ≤6 mm
Oxygen Content In Chamber ≤50 ppm
Nitrogen Requirement 0.2‑0.4 MPa, 1200 L/min
Compressed Air 0.4‑0.6 MPa, 500 L/min
Total Power 85 kW
Power Supply AC 380V, 3Φ5W, 50/60Hz
Overall Dimension L5000 × W2150 × H2200 mm
Control System Industrial PC + PLC, barcode scanning traceability
Application Semiconductor substrate baking, de‑moisture, adhesive curing, anti‑oxidation annealing